SDB85N03L Datasheet | SamHop

S am Hop Microelectronics C orp. S DP /B 85N03L May,2004 ver1.1 N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y F E AT UR E S VDS S 30V ID R DS (on) ( m W ) Max 5 @ VGS = 10V 83A 7.5 @ VGS = 4.5V S uper high dense cell design for extremely low R DS (ON). High power and current handling capability. TO-220 & TO-263 package. GS S DB S E R IE S T O -263(DD-P AK ) S DP S E R IE S TO-220 ABS OLUTE MAXIMUM R ATINGS (TC =25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage S ymbol VDS VGS Limit 30 20 Drain C urrent-C ontinuous @ TJ=125 C -P ulsed a ID IDM 83 249 Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating and S torage Temperature R ange TJ, TS TG THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient R JC R JA 75 -65 to 175 2 62.5 Unit V V A A A W C C /W C /W S DP /B 85N03L E...