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S DM8401
S amHop Microelectronics C orp.
Augus t , 2002
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
P R ODUC T S UMMAR Y (N-C hannel)
VDS S
ID R DS (ON) ( m W ) TYP
30V 6A
18.5 @ VGS = 10V 25 @ VGS = 4.5V
P R ODUC T S UMMAR Y (P -C hannel)
VDS S
ID R DS (ON) ( m W ) TYP
-30V
-4.5A
38.5 @ VGS = -10V 57.5 @ VGS = -4.5V
D1 D1 D2 D2
87 65
S O-8
1
1234
S1 G1 S2 G2
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol N-C hannel P-C hannel Unit
Drain-S ource Voltage
VDS 30 -30
V
Gate-S ource Voltage
VGS 20 20
V
Drain C urrent-C ontinuous a @ TJ=125 C -P ulsed b
ID 6.0 4.5 IDM 18.0 15
A A
Drain-S ource Diode Forward C urrent a
IS 1.7 -1.7 A
Maximum P ower Dissipation a
PD 2.