SMD10U50SP Datasheet PDF

FEATURES

Low Profile Design for Smart Phone Charger Ideal for SMT Mounting Low forward voltage drop High forward surge capability Excellent High Temperature Stability TO-277 Top View Bottom View ANODE PINS BOTTOMSIDE HEAT SINK

ABSOLUTE MAXIMUM RATINGS

(TA=25°C unless otherwise noted) Symbol Parameter VRRM Peak Repetitive Reverse Voltage VRWM VRM Working Peak Reverse Voltage DC Blocking Voltage VR(RMS) RMS Reverse Voltage IO Average Rectified Output Current I FSM Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load EAS Non-Repetitive Avalanche Energy (TJ= 25°C,IAS = 10,L = 5mH) PARM Repetitive Peak Avalanche Energy Value 50 50 50 35 10 120 170 24000 Unit V V V V A A mJ W THERMAL CHARACTERISTICS Symbol R JA TJ T STG Parameter Thermal Resistance, Junction-