SamHop SMD30U50P
MOS Controlled Diode
FEATURES
Low Profile Design for Smart Phone Charger Ideal for SMT Mounting Low forward voltage drop High forward surge capability Excellent High Temperature Stability A A A A K K DFN 5x6 K K ANODE PINS BOTTOMSIDE HEAT SINKABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise noted) Symbol Parameter VRRM Peak Repetitive Reverse Voltage VRWM Working Peak Reverse Voltage VRM DC Blocking Voltage VR(RMS) IO RMS Reverse Voltage Average Rectified Output Current I FSM Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load EAS Non-Repetitive Avalanche Energy (TJ= 25°C,IAS = 16,L = 5mH) PARM Repetitive Peak Avalanche Energy THERMAL CHARACTERISTICS Symbol R JA TJ T STG Parameter Thermal Resistance, Junction-to-Ambient Operating Temperature Range Storage Temperature Ra