SamHop SP2013
P-Channel Enhancement Mode Field Effect Transistor
| Part No. | SP2013 |
|---|---|
| Datasheet | SP2013 Download |
| Manufacturer |  SamHop |
| Description | P-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D D D P in 1 5 6 7 8 4 3 2 1 G S S S D TSON 3.3 x 3.3ABSOLUTE MAXIMUM RATINGS
( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a d Limit -20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C -8.5 -6.8 -49 a Units V V A A A W W °C Maximum Power Dissipation 1.67 1.07 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 75 °C/W Details are subject to change without notice. Jul,18,2013 1 SP2013 Ver 1.1ELECTRICAL CHARACTERISTICS
( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min -20 -1 ±100 Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VGS=0V , ID=-250uA VDS=-16V , V...
