Datasheet4U Logo Datasheet4U.com

SP2013 - P-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D D D P in 1 5 6 7 8 4 3 2 1 G S S S D TSON 3.3 x 3.3.

📥 Download Datasheet

Datasheet Details

Part number SP2013
Manufacturer SamHop
File Size 110.42 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SP2013 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SP201 Offline Current Mode PWM Controller SPMICRO
SP201 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Polyfet RF Devices
SP20100C Schottky Barrier Rectifiers Eris
SP20100R 20.0 Amp Schottky Barrier Rectifiers SeCoS
SP20150 VOLTAGE 150V 20.0AMP Schottky Barrier Rectifiers SeCoS

Other Datasheets by SamHop

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Green Product SP2013 Ver 1.1 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 20 @ VGS=-4.5V 21 @ VGS=-4.0V -20V -8.5A 22 @ VGS=-3.7V 25 @ VGS=-3.1V 28 @ VGS=-2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D D D P in 1 5 6 7 8 4 3 2 1 G S S S D TSON 3.3 x 3.3 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a d Limit -20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C -8.5 -6.8 -49 a Units V V A A A W W °C Maximum Power Dissipation 1.67 1.