SamHop STB3055L2
MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) Parameter Symbol Condition 5 DRAIN-SOURCE DIODE CHARACTERISTICS b Diode Forward Voltage VSD VGS = 0V, Is =15A Min Typ C Max Unit 1.1 1.3 V ID, Drain Current(A) Notes a.Surface Mounted on FR4 Board,t 10sec. b.Pulse Test:Pulse Width 300us,Duty Cycle 2%. c.Guaranteed by design,not subject to production testing. 20 VGS=10,9,8,7,6,5,4,3V 16 12 8 VGS=2V 4 0 0 12 3 4 56 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics ID, Drain Current (A) 25 25 C 20 -55 C 15 Tj=125 C 10 5 0 0.0 0.6 1.2 1.8 2.4 3.0 3.6 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics C, Capacitance (pF) 1500 1200 900 600 Ciss 300 Crss Coss 0 0 2 4 6 8 10 12 VDS, Drain-to Source Voltage (V) Figure 3. Capacitance RDS(ON), On-Resistance Normalized 2.2 VGS=4.5V 1.8 ID=6A 1.4 1.0 0.6 0.2 0 -50 -25 0 25 50 75 100 125 Tj( C) Figure 4. On-Resistance Variation with Temperature 3 S T P /B 3055L2 V th, Normalized G ate-S ource T hres hold V ol...