STB416D - Dual Enhancement Mode Field Effect Transistor

SamHop

Datasheet Details

Part number	STB416D
Manufacturer	SamHop
File Size	270.24 KB
Description	Dual Enhancement Mode Field Effect Transistor
Datasheet	STB416D Datasheet

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Green Product STB416D Ver 1.0 S a mHop Microelectronics C orp. Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRODUCT SUMMARY (N-Channel) V DSS 40V PRODUCT SUMMARY (P-Channel) V DSS -40V ID 18A R DS(ON) (m Ω) Max 28 43 @ VGS=10V ID -16A R DS(ON) (m Ω) Max 36 @ VGS=-10V 61 @ VGS=-4.5V @ VGS=4.5V D1 D1/D2 D2 G1 S1 G1 D1/D2 S2 G2 G2 STB SERIES TO-263 5L S1 N-ch S2 P -ch ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Parameter Symbol N-Channel P-Channel VDS Drain-Source Voltage -40 40 VGS Gate-Source Voltage ±20 ±20 TC=25°C -16 18 a ID Drain Current-Continuous TC=70°C 14.4 -12.8 b IDM -40 40 -Pulsed d 36 64 EAS Sigle Pulse Avalanche Energy PD TJ, TSTG Maximum Power Dissipation a Units V V A A A mJ W W °C TC=25°C TC=70°C 15.