SamHop STB60L60
N-Channel Logic Level Enhancement Mode Field Effect Transistor
| Part No. | STB60L60 |
|---|---|
| Datasheet | STB60L60 Download |
| Manufacturer |  SamHop |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 36A R DS(ON) (m Ω) Max 27 @ VGS=10V 42 @ VGS=4.5V D D G S G D S G S TP S E R IE S TO-220 S TB S E R IE S TO-263(DD-P AK) SABSOLUTE MAXIMUM RATINGS
( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Avalanche Energy c Maximum Power Dissipation a b a Limit 60 ±20 T C =25 °C T C =70 °C 36 29 106 113 TC=25°C TC=70°C 70 45 -55 to 150 Units V V A A A mJ W W °C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 1.75 62.5 °C/W °C/W Details are subject to change without notice. Sep,17,2008 1 Downloaded from Elcodis.com electronic components distributor STB/P60L60 Ver 1.0ELECTRICAL CHARACTERISTICS
( T C=25 °C unless otherwise noted ) 4 Symbol Par...
