SamHop STB70L60
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 70A R DS(ON) (m Ω) Typ 12 @ VGS=10V 18 @ VGS=4.5V D D G D S G S G S TP S E R IE S TO-220 S TB S E R IE S TO-263(DD-P AK) SABSOLUTE MAXIMUM RATINGS
( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 60 ±20 TC=25°C TC=70°C 70 58.6 206 272 TC=25°C TC=70°C 125 87.5 -55 to 175 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a a 1.2 62.5 °C/W °C/W Thermal Resistance, Junction-to-Ambient Details are subject to change without notice. Sep,10,2010 1 Downloaded from Elcodis.com electronic components distributor STB/P70L60 Ver 1.1ELECTRICAL CHARACTERISTICS
( T C=25 °C unless otherwise noted...