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STC8810 - Dual N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD HBM > 2KV. D1/D2 S1 S1 G1 TS S OP 18 27 36 45 (TOP VIE W) D1/D2 S2 S2 G2 D1 G1 G2 S1 D2 S2.

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Datasheet Details

Part number STC8810
Manufacturer SamHop
File Size 2.00 MB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet STC8810 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STC8810Green Product SamHop Microelectronics Corp. Dual N-Channel Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS 20V ID RDS(ON) (mW) Max 18.5 @ VGS=4.5V 19.5 @ VGS=4.0V 7A 20.0 @ VGS=3.7V 23.0 @ VGS=3.1V 28.5 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD HBM > 2KV.