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S T M7822A
S amHop Microelectronics C orp. Arp,20 2005 ver1.1
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
25V
F E AT UR E S
( m W ) Max
ID
14A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
7 @ V G S = 10V 9 @ V G S = 4.5V
R ugged and reliable. S urface Mount P ackage.
S O-8 1
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T c=25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol Vspike V DS V GS ID IDM IS PD T J , T S TG
d
Limit 30 25 16 14 56 14 2.
STM7822A Datasheet
