SamHop STM8319
Dual Enhancement Mode Field Effect Transistor
| Part No. | STM8319 |
|---|---|
| Datasheet | STM8319 Download |
| Manufacturer |  SamHop |
| Description | Dual Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a N-Channel 30 ±20 TA=25°C TA=70°C 7 5.6 25 17 TA=25°C TA=70°C 2 1.3 P-Channel -30 ±20 -6 -4.8 -22 20 Units V V A A A mJ W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range -55 to 150 THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 62.5 °C/W Details are subject to change without notice. Oct,29,2007 1 STM8319 Ver 1.0 N-ChannelELECTRICAL CHARACTERISTICS
( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units V 1 ±10 uA uA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS=0V , ID=250uA VDS=24V , VG...
