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STS2620A
S a mHop Microelectronics C orp.
Ver1.2
Dual Enhancement Mode Field Effect Transistor (N and P Channel )
PRODUCT SUMMARY (N-Channel)
V DSS
20V
PRODUCT SUMMARY (P-Channel)
V DSS
-20V
ID
2.5A
R DS(ON) (m Ω) Max
50 @ VGS=4.5V
ID
-2A
R DS(ON) (m Ω) Max
106 @ VGS=-4.5V 198 @ VGS=-2.5V
76 @ VGS=2.5V
SOT 26 Top View
D1
D2
G1 S2 G2
1 2 3
6 5 4
D1 S1 D2
G1
G2
S1 Nch
S2 P ch
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter N-Channel P-Channel VDS Drain-Source Voltage 20 -20 VGS Gate-Source Voltage ±10 ±10 TC=25°C 2.5 -2 a ID Drain Current-Continuous TC=70°C 2 -1.6 b IDM 8 -7 -Pulsed PD TJ, TSTG Maximum Power Dissipation
a
Units V V A A A W W °C
TC=25°C TC=70°C
1 0.
STS2620A Datasheet
