SamHop STU310DH
Dual Enhancement Mode Field Effect Transistor
ELECTRICAL CHARACTERISTICS
(T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS b Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 10A V GS =4.5V, ID= 8A V DS = 5V, V GS = 4.5V V DS = 10V, ID= 10A Min Typ C Max Unit 30 1 10 1 1.8 14 20 20 16.5 635 3 20 28 V uA uA V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS b Input Capacitance Output Capacitance R everse Transfer Capacitance V DS =15V, V GS = 0V f =1.0MH Z 170 97 V DD = 15V ID = 1 A V GS = 10V R GE N = 6 ohm V DS =15V, ID =20A,V GS =10V V DS =15V, ID =20A,V GS =4.5V Gate-S ource Charge Gate-Drain Charge Q gs Q gd V DS =15V, ID = 20 A V GS =10V 2 S WITCH...