SamHop STU411D
Dual Enhancement Mode Field Effect Transistor
| Part No. | STU411D |
|---|---|
| Datasheet | STU411D Download |
| Manufacturer |  SamHop |
| Description | Dual Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a TC=25°C TC=70°C N-Channel P-Channel 40 -40 ±20 ±20 15 -12 12 43 8 -10 -36 15 11 6.7 -55 to 175 Units V V A A A mJ W W °C Sigle Pulse Avalanche Energy Maximum Power Dissipation a TC=25°C TC=70°C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS a R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient a 12 60 °C/W °C/W Details are subject to change without notice. Aug,27,2009 1 STU411D Ver 1.1 N-ChannelELECTRICAL CHARACTERISTICS
( T C=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=250uA VDS=32V , VGS=0V Min 40 Typ Max Units V uA uA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain...
