FEATURES
N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 60 V : 0.023ohm : 50 A : 30 nc : 130 W SW50N06 GENERAL DESCRIPTION
It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. D G S ABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG,TJ TL Drain to Source Voltage Continuous Drain Current (@Tc=25 ) Continuous Drain Current (@Tc=100 Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (@Tc=25 ) Derating Factor above 25 Operating junction temperature &Storage temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) ) (Note 1) Parameter Value 60 50 35 200 ±20 480 13 7 130 0.9 -55 ~ +150 300 Units V A A A V mJ mJ V/ns W W/ Thermal Characteristics Value Symbol R R R JC CS JA Units Max 1.1...
Sammwin
