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K6F1008S2M - SRAM

Datasheet Summary

Description

The K6F1008V2M, K6F1008S2M and K6F1008R2M families are fabricated by SAMSUNG′s advanced Full CMOS process technology.

The families support various operating temperature range and have various package types for user flexibility of system design.

Features

  • Process Technology: Full CMOS.
  • Organization: 128K x8 bit.
  • Power Supply Voltage K6F1008V2M Family: 3.0V ~ 3.6V K6F1008S2M Family: 2.3V ~ 3.3V K6F1008R2M Family: 1.8V ~ 2.7V.
  • Low Data Retention Voltage: 1.5V(Min).
  • Three state output and TTL Compatible.
  • Package Type: 32-SOP-525, 32-TSOP1-0820F, 32-TSOP1-0813.4F, 48-CSP.

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Datasheet Details

Part number K6F1008S2M
Manufacturer Samsung Electronics
File Size 191.02 KB
Description SRAM
Datasheet download datasheet K6F1008S2M Datasheet
Additional preview pages of the K6F1008S2M datasheet.

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Full PDF Text Transcription

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K6F1008V2M, K6F1008S2M, K6F1008R2M Family Document Title 128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial draft Revise - Erase 100ns from KM68FS1000 Family - Add 150ns for KM68FS1000 Family - Add 32-sTSOP1 new package - Add high power version ISB1=5.0µA(Max) - Change VDR(Min) 1.0 to 1.5V Finalize - Concept change high power version to low low power version ISB1=5.0µA(Max) - Change super low power version with special handling ISB1=1.0µA(Max) - Icc & Icc1(Read) decrease 10 to 5mA Revise - Change datasheet format - Remove reverse type package from product - Remove reserved speed bin(100ns) Revise - Add CSP type packaged product.
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