K7D323674A - 1Mx36 & 2Mx18 SRAM

Datasheet Summary

Description

The K7D323674A and K7D321874A are 37,748,736 bit Synchronous Pipeline Burst Mode SRAM devices.

They are organized as 1,048,576 words by 36 bits for K7D323674A and 2,097,152 words by 18 bits for K7D321874A, fabricated using Samsung's advanced CMOS technology.

Features

: 1.5V V DDQ -> 1.5~.1.8V V DDQ - In.

Samsung Electronics

📥 Download Datasheet

Datasheet Details

Part number	K7D323674A
Manufacturer	Samsung Electronics
File Size	218.43 KB
Description	1Mx36 & 2Mx18 SRAM
Datasheet	K7D323674A Datasheet
Additional preview pages of the K7D323674A datasheet.

📁 Similar Datasheet

K7D323674A - 32Mb A-die DDR SRAM (Samsung semiconductor)
K7D323674C - 1Mx36 & 2Mx18 SRAM (Samsung semiconductor)
K7D321874A - 32Mb A-die DDR SRAM (Samsung semiconductor)
K7D321874C - 1Mx36 & 2Mx18 SRAM (Samsung semiconductor)
K7D161874B - 512Kx36 & 1Mx18 SRAM (Samsung Semiconductor)
K7D163674B - 512Kx36 & 1Mx18 SRAM (Samsung Semiconductor)
K7D801871B - SRAM (Samsung)
K7D803671B - SRAM (Samsung)

Other Datasheets by Samsung Electronics

K7D321874A - 1Mx36 & 2Mx18 SRAM

Full PDF Text Transcription

Click to expand full text

K7D323674A K7D321874A Document Title 32M DDR SYNCHRONOUS SRAM Advance www.DataSheet4U.com 1Mx36 & 2Mx18 SRAM Revision History Rev No. Rev. 0.0 Rev. 0.1 History Initial document. Remove /G operation thru the Spec. - Remove /G from PUNCTIONAL BLOCK DIAGRAM, PIN CONFIGURATION, TRUTH TABLE and TIMING WAVEFORMs Add 300MHz Speed bin. - Add Part ID at ORDERING INFORMATION & I DD30 at DC CHARACTERISTICS Change ILI and I Lo at DC CHARCATERISTICS - ILI : MIN -1 -> -3, MAX 1 -> 3, ILo : MIN -1 -> -5, MAX 1 -> 5 Change the comment of Programmable Impedance Output Driver. DraftData Dec. 2002 Jan. 2003 Remark Advance Advance PRE- PUBLICATION DRAFT SUBJECT TO CHANGE WITHOUT NOTICE Change PIN CAPACITANCE : C IN : 3 -> 3.1 Change AC TEST CONDITIONS : T R/R F: 0.4/0.4 -> 0.5/0.

Published: Jun 9, 2010 |