Datasheet Details
| Part number | K8A5615EBA |
|---|---|
| Manufacturer | Samsung Electronics |
| File Size | 743.68 KB |
| Description | Flash Memory |
| Datasheet |
 K8A5615EBA Datasheet
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General Description
of range limitation of data read out during program suspend.(Refer to "Program Suspend/Resume" paragragh)
Draft Date
March 15, 2004 June 1, 2004
Remark
Advance Preliminary
0.2
July 5, 2004
Preliminary
0.3
August 3, 2004
Preliminary
0.4
August 23, 2004
Preliminary
0.5
September 6, 2004 P
Key Features
- Single Voltage, 1.7V to 1.95V for Read and Write operations.
- Organization - 16,772,216 x 16 bit ( Word Mode Only).
- Read While Program/Erase Operation.
- Multiple Bank Architecture - 16 Banks (16Mb Partition).
- OTP Block : Extra 256Byte block.
- Read Access Time (@ CL=30pF) - Asynchronous Random Access Time : 90ns (54MHz) / 80ns (66MHz) - Synchronous Random Access Time : 88.5ns (54MHz) / 70ns (66MHz) - Burst Access Time : 14.5ns (54MHz) / 11ns (66.