K8A5615EBA - Flash Memory

Product Overview

Samsung Electronics

Datasheet Details

Part number	K8A5615EBA
Manufacturer	Samsung Electronics
File Size	743.68 KB
Description	Flash Memory
Datasheet	K8A5615EBA Datasheet
Additional preview pages of the K8A5615EBA datasheet.

Product details

Description

of range limitation of data read out during program suspend.(Refer to "Program Suspend/Resume" paragragh) Draft Date March 15, 2004 June 1, 2004 Remark Advance Preliminary 0.2 July 5, 2004 Preliminary 0.3 August 3, 2004 Preliminary 0.4 August 23, 2004 Preliminary 0.5 September 6, 2004 Preliminary 0.6 Revision December 13, 2004 Preliminary - Add the requirement and note of Quadruple word program operation Specification finalized December 16, 2004 1.0 1 Revision 1.0 December, 200

Features

Single Voltage, 1.7V to 1.95V for Read and Write operations.
Organization - 16,772,216 x 16 bit ( Word Mode Only).
Read While Program/Erase Operation.
Multiple Bank Architecture - 16 Banks (16Mb Partition).
OTP Block : Extra 256Byte block.
Read Access Time (@ CL=30pF) - Asynchronous Random Access Time : 90ns (54MHz) / 80ns (66MHz) - Synchronous Random Access Time : 88.5ns (54MHz) / 70ns (66MHz) - Burst Access Time : 14.5ns (54MHz) / 11ns (66.

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