K8A5615EBA Description
K8A5615ET(B)A FLASH MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory.
K8A5615EBA Key Features
- Single Voltage, 1.7V to 1.95V for Read and Write operations
- Organization
- 16,772,216 x 16 bit ( Word Mode Only)
- Read While Program/Erase Operation
- Multiple Bank Architecture
- 16 Banks (16Mb Partition)
- OTP Block : Extra 256Byte block
- Read Access Time (@ CL=30pF)
- Asynchronous Random Access Time : 90ns (54MHz) / 80ns (66MHz)
- Synchronous Random Access Time : 88.5ns (54MHz) / 70ns (66MHz)