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K8A5615EBA - Flash Memory

Datasheet Summary

Description

of range limitation of data read out during program suspend.(Refer to "Program Suspend/Resume" paragragh) Draft Date March 15, 2004 June 1, 2004 Remark Advance Preliminary 0.2 July 5, 2004 Preliminary 0.3 August 3, 2004 Preliminary 0.4 August 23, 2004 Preliminary 0.5 September 6, 2004 P

Features

  • Single Voltage, 1.7V to 1.95V for Read and Write operations.
  • Organization - 16,772,216 x 16 bit ( Word Mode Only).
  • Read While Program/Erase Operation.
  • Multiple Bank Architecture - 16 Banks (16Mb Partition).
  • OTP Block : Extra 256Byte block.
  • Read Access Time (@ CL=30pF) - Asynchronous Random Access Time : 90ns (54MHz) / 80ns (66MHz) - Synchronous Random Access Time : 88.5ns (54MHz) / 70ns (66MHz) - Burst Access Time : 14.5ns (54MHz) / 11ns (66.

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Datasheet Details

Part number K8A5615EBA
Manufacturer Samsung Electronics
File Size 743.68 KB
Description Flash Memory
Datasheet download datasheet K8A5615EBA Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com K8A5615ET(B)A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History 0.0 0.1 Advanced Revision - Change the speed code 7B : 90ns @54MHz ---> 7B : 88.5ns @54MHz Revision - Change the device version ID Top boot device : 22ECH --> 22FCH Bottom boot device : 22EDH --> 22FDH - Not support accelerated quad word program operation Revision - Change the initial access time of asynchronous read mode K8A56156ET(B)A-DE7C tAA : 70ns--->80ns tCE : 70ns--->80ns - Support accelerated quad word program operation Revision - Add the operation flow chart Revision - Add the description of range limitation of data read out during program suspend.
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