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K9F8G08B0M - FLASH MEMORY

This page provides the datasheet information for the K9F8G08B0M, a member of the K9F8G08UXM FLASH MEMORY family.

Datasheet Summary

Description

Offered in 1Gx8bit, the K9F8G08X0M is a 8G-bit NAND Flash Memory with spare 256M-bit.

The device is offered in 2.7V and 3.3V Vcc.

Its NAND cell provides the most cost-effective solution for the solid state application market.

Features

  • Voltage Supply - 2.7V Device(K9F8G08B0M) : 2.5V ~ 2.9V - 3.3V Device(K9F8G08U0M) : 2.7V ~ 3.6V.
  • Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (4K + 128) x 8bit.
  • Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (256K + 8K)Byte.
  • Page Read Operation - Page Size : (4K + 128)Byte - Random Read : 25µs(Max. ) - Serial Access : 25ns(Min. ).
  • Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase.

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Datasheet preview – K9F8G08B0M

Datasheet Details

Part number K9F8G08B0M
Manufacturer Samsung Electronics
File Size 1.37 MB
Description FLASH MEMORY
Datasheet download datasheet K9F8G08B0M Datasheet
Additional preview pages of the K9F8G08B0M datasheet.

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Full PDF Text Transcription

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K9KAG08U1M K9F8G08U0M K9F8G08B0M FLASH MEMORY www.DataSheet4U.com K9F8G08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.
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