Datasheet Details
| Part number | K9HBG08U1M |
|---|---|
| Manufacturer | Samsung Electronics |
| File Size | 1.11 MB |
| Description | Flash Memory |
| Datasheet |
 K9HBG08U1M Datasheet
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General Description
Offered in 2Gx8bit, the K9LAG08U0M is a 16G-bit NAND Flash Memory with spare 512M-bit.
Its NAND cell provides the most costeffective solution for the solid state mass storage market.
Key Features
- Voltage Supply : 2.7 V ~ 3.6 V.
- Organization - Memory Cell Array : (2G + 64M)bit x 8bit - Data Register : (2K + 64)bit x8bit.
- Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte.
- Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 60µs(Max. ) - Serial Access : 30ns(Min. ).
- K9MCG08U5M : 50ns(Min. ).
- Memory Cell : 2bit / Memory Cell.
- Fast Write Cycle Time - Program time : 800µs(Typ. ) - Block.