K9HBG08U1M
Description
Offered in 2Gx8bit, the K9LAG08U0M is a 16G-bit NAND Flash Memory with spare 512M-bit.
Key Features
- Voltage Supply : 2.7 V ~ 3.6 V
- Organization - Memory Cell Array : (2G + 64M)bit x 8bit - Data Register : (2K + 64)bit x8bit
- Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte
- Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 60µs(Max.) - Serial Access : 30ns(Min.) *K9MCG08U5M : 50ns(Min.)
- Memory Cell : 2bit / Memory Cell
- Fast Write Cycle Time - Program time : 800µs(Typ.) - Block Erase Time : 1.5ms(Typ.)
- mand/Address/Data Multiplexed I/O Port
- Hardware Data Protection - Program/Erase Lockout During Power Transitions
- Reliable CMOS Floating-Gate Technology - Endurance : 5K Program/Erase Cycles(with 4bit/512byte ECC) - Data Retention : 10 Years
- mand Register Operation
