Datasheet4U.com

K9LAG08U1M - (K9XXG08UXM) Flash Memory

Product Overview

Samsung Electronics

📥 Download Datasheet

K9LAG08U1M (K9XXG08UXM) Flash Memory by Samsung Electronics - Datasheet Preview — Datasheet preview – K9LAG08U1M

Datasheet Details

Part number	K9LAG08U1M
Manufacturer	Samsung Electronics
File Size	1.01 MB
Description	(K9XXG08UXM) Flash Memory
Datasheet	K9LAG08U1M Datasheet
Additional preview pages of the K9LAG08U1M datasheet.

Product details

Description

Offered in 1Gx8bit, the K9G8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit.

Features

Voltage Supply : 2.7 V ~ 3.6 V.
Organization - Memory Cell Array : (1G + 32M)bit x 8bit - Data Register : (2K + 64)bit x8bit.
Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte.
Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 60µs(Max. ) - Serial Access : 30ns(Min. ).
Memory Cell : 2bit / Memory Cell.
Fast Write Cycle Time - Program time : 800µs(Typ. ) - Block Erase Time : 1.5ms(Typ. ).

📁 Similar Datasheet

K9LAG08U1A - FLASH MEMORY (Samsung)
K9L8G08U1A - Flash Memory (Samsung)
K9LBG08U0D - 4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory (Samsung semiconductor)
K9LBG08U0E - 16Gb E-die NAND Flash (Samsung)
K9LBG08U1D - FLASH MEMORY (Samsung)
K9LBG08U1M - FLASH MEMORY (Samsung)
K9LCG08U0B - 32Gb B-die NAND Flash (Samsung)
K9LCG08U1A - 32Gb A-die NAND Flash (Samsung)

Other Datasheets by Samsung Electronics

K9LAG08U0M - Flash Memory
K9LBG08U0M - FLASH MEMORY

Published: Sep 26, 2007 |