K9LAG08U1M Overview
K9LAG08U1M K9G8G08U0M Preliminary FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS"...
K9LAG08U1M Key Features
- Voltage Supply : 2.7 V ~ 3.6 V
- Organization
- Memory Cell Array : (1G + 32M)bit x 8bit
- Data Register : (2K + 64)bit x8bit
- Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (256K + 8K)Byte
- Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 60µs(Max.)
K9LAG08U1M Applications
- Samsung Electronics reserves the right to change products or specification without notice
