• Part: KFH2G16Q2A-DEBx
  • Description: FLASH MEMORY
  • Manufacturer: Samsung Electronics
  • Size: 2.16 MB
Download KFH2G16Q2A-DEBx Datasheet PDF
Samsung Electronics
KFH2G16Q2A-DEBx
KFH2G16Q2A-DEBx is FLASH MEMORY manufactured by Samsung Electronics.
overview , revision history, and product ordering information. Section 2.0 describes the One NAND device. Section 3.0 provides information about device operation. Electrical specifications and timing waveforms are in Sections 4.0 though 6.0. Section 7.0 provides additional application and technical notes pertaining to use of the One NAND. Package dimensions are found in Section 8.0 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. One NAND™‚ is a trademark of Samsung Electronics pany, Ltd. Other names and brands may be claimed as the property of their rightful owners. Copyright © 2005, Samsung Electronics pany, Ltd. One NAND1G(KFG1G16Q2A-DEBx) One NAND2G(KFH2G16Q2A-DEBx) One NAND4G(KFW4G16Q2A-DEBx) Preliminary FLASH MEMORY .. One NAND Revision History Document Title Revision History Revision No. History 0.1 0.2 1. Initial issue. 1. Corrected the errata 2. Changed the term BRL to BRWL. 3. Increased NOP from 1 to 2(per sector). 4. Revised Chap. 3.2 Device Bus Operation. 5. Revised Synchronous Burst Block Read to no-wrap. 1. Corrected Errata 2. Revised t RDYO from 11ns to 9ns. 3. Revised t AAVDH from 7ns to 6ns. 4. Revised t ESP value to typ 400us / max 500us. 5. Revised DBS Description . 6....