• Part: KM29W16000ATS
  • Manufacturer: Samsung Electronics
  • Size: 246.68 KB
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KM29W16000ATS Key Features

  • Voltage Supply : 2.7V ~ 5.5V
  • Organization
  • Memory Cell Array : (2M + 64K)bit x 8bit
  • Data Register : (256 + 8)bit x8bit
  • Automatic Program and Erase
  • Page Program : (256 + 8)Byte
  • Block Erase : (4K + 128)Byte
  • Status Register
  • 264-Byte Page Read Operation
  • Random Access : 10 µs(Max.)

Related Samsung Electronics Datasheets

Part Number Description
KM29N040IT Flash Memory
KM29N040T Flash Memory
KM29N16000 2M x 8-Bit NAND Flash Memory
KM29N16000AIT 2M x 8-Bit NAND Flash Memory
KM29N16000AT 2M x 8-Bit NAND Flash Memory

KM29W16000ATS Description

The KM29W16000A is a 2M(2,097,152)x8bit NAND Flash Memory with a spare 64K(65,536)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 264-byte page in typically 250µs and an erase operation can be performed in typically 2ms on a 4K-byte block.