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K1B3216BDD

Manufacturer: Samsung Semiconductor

K1B3216BDD datasheet by Samsung Semiconductor.

K1B3216BDD datasheet preview

K1B3216BDD Datasheet Details

Part number K1B3216BDD
Datasheet K1B3216BDD_SamsungSemiconductor.pdf
File Size 800.98 KB
Manufacturer Samsung Semiconductor
Description 2M x 16 bit Synchronous Burst Uni-Transistor CMOS RAM
K1B3216BDD page 2 K1B3216BDD page 3

K1B3216BDD Overview

The world is moving into the mobile multi-media era and therefore the mobile handsets need much bigger memory capacity to handle the multi-media data. SAMSUNG’s UtRAM products are designed to meet all the request from the various customers who want to cope with the fast growing mobile market. UtRAM is the perfect solution for the mobile market with its low cost, high density and high performance.

K1B3216BDD Key Features

  • Software Control Supports Driver Strength Optimization for system environment Supports Async. 4-Page Read / Async. Write
  • Supports Sync. Burst Read / Sync. Burst Write Mode
  • Supports 4 word / 8 word / 16 word burst Length
  • Supports Linear(Wrap) Burst type
  • Supports Burst Read Suspend
  • Supports Burst Write Data Masking by /UB & /LB control
  • Supports WAIT function to indicate data availability
  • Max. Burst Clock Frequency : 66MHz
  • Package Type : 54 FBGA 6.00 x 8.00

K1B3216BDD from other manufacturers

View K1B3216BDD datasheet index

Brand Logo Part Number Description Other Manufacturers
SAMSUNG ELECTRONICS K1B3216BDD 2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory SAMSUNG ELECTRONICS
Samsung Semiconductor logo - Manufacturer

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K1B6416B6C 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory

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