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K4H560438D-TCB3 - 256Mb D-die DDR Sdram

Download the K4H560438D-TCB3 datasheet PDF. This datasheet also covers the K4H560838D-TCB3 variant, as both devices belong to the same 256mb d-die ddr sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

Clock : CK and CK are differential clock inputs.

All address and control input signals are sampled on the positive edge of CK and negative edge of CK.

Output (read) data is referenced to both edges of CK.

Key Features

  • Double-data-rate architecture; two data transfers per clock cycle.
  • Bidirectional data strobe(DQS).
  • Four banks operation.
  • Differential clock inputs(CK and CK).
  • DLL aligns DQ and DQS transition with CK transition.
  • MRS cycle with address key programs -. Read latency 2, 2.5 (clock) www. DataSheet4U. com -. Burst length (2, 4, 8) -. Burst type (sequential & interleave).
  • All inputs except data & DM are sampled at the positive going edge of.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4H560838D-TCB3_SamsungSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
K4H560438D-TCB0 128Mb DDR SDRAM Samsung
K4H560438D-TCA0 128Mb DDR SDRAM Samsung
K4H560438D-TCA2 128Mb DDR SDRAM Samsung
K4H560438D-TLA0 128Mb DDR SDRAM Samsung
K4H560438D-TLA2 128Mb DDR SDRAM Samsung

Other Datasheets by Samsung Semiconductor

Part Number Description
K4H560438H (K4H560438H - K4H561638H) 256Mb H-die DDR SDRAM Specification
K4H560438J 256Mb J-die DDR SDRAM Specification
K4H560838D-TCB3 256Mb D-die DDR Sdram
K4H560838F-TC DDR SDRAM 256Mb F-die
K4H560838F-TCC4 256Mb F-die DDR400 SDRAM Specification

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
256Mb Key Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 2, 2.5 (clock) www.DataSheet4U.com -. Burst length (2, 4, 8) -. Burst type (sequential & interleave) • All inputs except data & DM are sampled at the positive going edge of the system clock(CK) • Data I/O transactions on both edges of data strobe • Edge aligned data output, center aligned data input • LDM,UDM/DM for write masking only • Auto & Self refresh • 7.8us refresh interval(8K/64ms refresh) • Maximum burst refresh cycle : 8 • 66pin TSOP II package DDR SDRAM ORDERING INFORMATION Part No.