KM23C32000CT Datasheet | Samsung Semiconductor

FEATURES - Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) - Fast access time : 100ns(Max.) - Supply voltage : single +5V - Current consumption Operating : 50m A(Max.) Standby : 50µA(Max.) - Fully static operation - All inputs and outputs TTL patible - Three state outputs - Package -. KM23C32000C(E)T : 44-TSOP2-400 CMOS MASK ROM GENERAL DESCRIPTION The KM23C32000C(E)T is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 4,194,304 x 8 bit(byte mode) or as 2,097,152 x 16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with a 5V single power supply, and all inputs and outputs are TTL patible. Because of its asynchronous operation, it requires no external clock assuring extremely easy operation. It is suitable for use in program memory of microprocessor, and data memory, character generator. The KM23C32000C(E)T is packaged in a 44-TSOP2. FUNCTIONAL BLOCK DIAGRAM A20 - . . . A0 A-1 X BUFFERS AND DECODER MEMORY CELL MATRIX (2,097,152x16/ 4,194,304x8) PRODUCT INFORMATION Product KM23C32000CT KM23C32000CET Operating Temp Range 0°C~70°C -20°C~85°C 5V 100 Vcc Range (Typical) Speed (ns) Y BUFFERS AND DECODER SENSE AMP. BUFFERS PIN CONFIGURATION N.C 1 2 3 4 5 6 7 8 9 11 44 A20 43 A19 42 A8 41 A9 40 A10 39 A11 38 A12 37 A13 36 A14 35 A15 . . . CE OE BHE CONTROL LOGIC Q0/Q8 Q7/Q15 A18 A17 A7 A6 A5 A4 A3 A2 A0 A1 10 Pin Name A0 - A20 Q0 - Q14 Q15 /A-1 BHE CE OE VCC VSS N.C Pin Function Address Inputs Data Outputs Output 15(Word mode)/ LSB Address(Byte mode) Word/Byte selection Chip Enable Output Enable Power (+5V) Ground No Connection TSOP2 34 A16 33 BHE 32 VSS 31 Q15/A-1 30 Q7 29 Q14 28 Q6 27 Q13 26 Q5 25 Q12 24 Q4 23 VCC CE 12 VSS 13 OE 14 Q0 Q8 15 16 Q1 17 Q9 18 Q2 Q10 19 20 Q3 21 Q11 22 KM23C32000C(E)T .. KM23C32000C(E)T ABSOLUTE MAXIMUM RATINGS Item Voltage on Any Pin Relative to VSS Temperature Under Bias...