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KM23C32000CT - 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM

General Description

The KM23C32000C(E)T is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 4,194,304 x 8 bit(byte mode) or as 2,097,152 x 16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with a 5V sing

Key Features

  • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode).
  • Fast access time : 100ns(Max. ).
  • Supply voltage : single +5V.
  • Current consumption Operating : 50mA(Max. ) Standby : 50µA(Max. ).
  • Fully static operation.
  • All inputs and outputs TTL compatible.
  • Three state outputs.
  • Package -. KM23C32000C(E)T : 44-TSOP2-400 CMOS MASK ROM.

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Other Datasheets by Samsung Semiconductor

Part Number Description
KM23C32000C 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
KM23C32000CET 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
KM23C32000CG 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
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www.DataSheet4U.com KM23C32000C(E)T 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation • All inputs and outputs TTL compatible • Three state outputs • Package -. KM23C32000C(E)T : 44-TSOP2-400 CMOS MASK ROM GENERAL DESCRIPTION The KM23C32000C(E)T is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 4,194,304 x 8 bit(byte mode) or as 2,097,152 x 16 bit(word mode) depending on BHE voltage level.