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KM23S32000D Key Features

  • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode)
  • Fast access time Random Access Time 3.3V/3.0V Operation : 100ns(Max.) 2.5V Operation : 150ns(Max.)
  • Current consumption Operating : 40mA(Max.) Standby : 30µA(Max.)
  • Fully static operation
  • All inputs and outputs TTL patible
  • Three state outputs
  • Package -. KM23V(S)32000D(E)TY : 48-TSOP1-1218
  • A0 A-1
  • Q14 Q15 /A-1 BHE CE OE VCC VSS

Related Samsung Semiconductor Datasheets

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KM23S32000BTY 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
KM23S32000E (KM23x32000xTY) 32M-Bit CMOS Mask ROM
KM23S32000ETY (KM23x32000xTY) 32M-Bit CMOS Mask ROM

KM23S32000D Description

Because of its asynchronous operation, it requires no external clock assuring extremely easy operation. It is suitable for use in program memory of microprocessor, and data memory, character generator. The KM23V32000D(E)TY and KM23S32000D(E)TY are packaged in a 48-TSOP1.