Download KM29W32000AT Datasheet PDF
KM29W32000AT datasheet preview
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KM29W32000AT Key Features

  • Voltage Supply : 2.7V ~ 5.5V
  • Organization
  • Memory Cell Array : (4M + 128K)bit x 8bit
  • Data Register : (512 + 16)bit x8bit
  • Automatic Program and Erase
  • Page Program : (512 + 16)Byte
  • Block Erase : (8K + 256)Byte
  • Status Register
  • 528-Byte Page Read Operation
  • Random Access : 10µs(Max.)

KM29W32000AT Description

The KM29W32000A is a 4M(4,194,304)x8bit NAND Flash Memory with a spare 128K(131,072)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typically 250µs and an erase operation can be performed in typically 2ms on an 8K-byte block.