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KM29W32000AT - 4M x 8-Bit NAND Flash Memory

Download the KM29W32000AT datasheet PDF. This datasheet also covers the KM29W32000AIT variant, as both devices belong to the same 4m x 8-bit nand flash memory family and are provided as variant models within a single manufacturer datasheet.

General Description

The KM29W32000A is a 4M(4,194,304)x8bit NAND Flash Memory with a spare 128K(131,072)x8bit.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Key Features

  • Voltage Supply : 2.7V ~ 5.5V.
  • Organization - Memory Cell Array : (4M + 128K)bit x 8bit - Data Register : (512 + 16)bit x8bit.
  • Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (8K + 256)Byte - Status Register.
  • 528-Byte Page Read Operation - Random Access : 10µs(Max. ) - Serial Page Access : 50ns(Min. ).
  • Fast Write Cycle Time - Program time : 250µs(typ. ) - Block Erase time : 2ms(typ. ).
  • Command/Address/Data Multiplexed.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KM29W32000AIT_SamsungSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
KM29W16000ATS 2M x 8-Bit NAND Flash Memory Samsung Electronics
KM29N040IT Flash Memory Samsung Electronics
KM29N040T Flash Memory Samsung Electronics
KM29N16000 2M x 8-Bit NAND Flash Memory Samsung Electronics
KM29N16000AIT 2M x 8-Bit NAND Flash Memory Samsung Electronics

Other Datasheets by Samsung Semiconductor

Part Number Description
KM29W32000AIT 4M x 8-Bit NAND Flash Memory
KM29W32000TS 4M x 8-Bit NAND Flash Memory
KM29W040AT 512K x 8 bit NAND Flash Memory
KM29U128IT 16M x 8 Bit NAND Flash Memory
KM29U128T 16M x 8 Bit NAND Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
KM29W32000AT, KM29W32000AIT Document Title 4M x 8 Bit NAND Flash Memory Revision History w w w Revision No. History 0.0 0.1 Initial issue. Data Sheet, 1999 1) Added CE don’ t care mode during the data-loading and reading .D at h S a t e e 4U . m o c FLASH MEMORY Draft Date April 10th 1998 April 10th 1999 Remark Advanced Information Final w w w .D t a S a e h t e U 4 .c m o The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you. 1 w w w .D at h S a t e e 4U .