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KM29W32000TS - 4M x 8-Bit NAND Flash Memory

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Samsung Semiconductor

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KM29W32000TS 4M x 8-Bit NAND Flash Memory by Samsung Semiconductor - Datasheet Preview — Datasheet preview – KM29W32000TS

Datasheet Details

Part number	KM29W32000TS
Manufacturer	Samsung Semiconductor
File Size	346.81 KB
Description	4M x 8-Bit NAND Flash Memory
Datasheet	KM29W32000TS Datasheet
Additional preview pages of the KM29W32000TS datasheet.

Product details

Description

The KM29W32000 is a 4M(4,194,304)x8bit NAND Flash Memory with a spare 128K(131,072)x8bit.

Features

Voltage Supply : 2.7V ~ 5.5V.
Organization - Memory Cell Array : (4M + 128K)bit x 8bit - Data Register : (512 + 16)bit x8bit.
Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (8K + 256)Byte - Status Register.
528-Byte Page Read Operation - Random Access : 10µs(Max. ) - Serial Page Access : 50ns(Min. ).
Fast Write Cycle Time - Program time : 250µs(typ. ) - Block Erase time : 2ms(typ. ).
Command/Address/Data Multiplexed.

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Published: Jan 13, 2006 |