Datasheet4U Logo Datasheet4U.com

KM416S1020C - 1M x 16 SDRAM

Datasheet Summary

Description

The KM416S1020C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

  • 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst Read Single-bit Write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle) CMOS SDRAM.

📥 Download Datasheet

Datasheet preview – KM416S1020C

Datasheet Details

Part number KM416S1020C
Manufacturer Samsung Semiconductor
File Size 764.54 KB
Description 1M x 16 SDRAM
Datasheet download datasheet KM416S1020C Datasheet
Additional preview pages of the KM416S1020C datasheet.

📁 Similar Datasheet

  • KM416S1020BT-G10T - CMOS 16M-Bit SDRAM (ETC)
  • KM416S1120AT - 521K x 16-Bit x 2 Bank SDRAM (Samsung Electronics)
  • KM416S1120D - 512K x 16bit x 2 Banks Synchronous DRAM LVTTL (ETC)
  • KM416S4020A - CMOS SDRAM (Samsung Electronics)
  • KM416S4020B - CMOS SDRAM (Samsung Electronics)
  • KM416S4021AT - CMOS SDRAM (Samsung Electronics)
  • KM416S4021B - CMOS SDRAM (Samsung Electronics)
  • KM416C1200AT-6T - C-MOS 1M 16-BIT DYNAMIC RAM (ETC)
  • KM4100 - Low Cost/ +2.7V and +5V/ 260MHz Rail-to-Rail Amplifiers (Fairchild Semiconductor)
  • KM4101 - Low Cost/ +2.7V and +5V/ 260MHz Rail-to-Rail Amplifiers (Fairchild Semiconductor)
Other Datasheets by Samsung Semiconductor
  • KM416S1021C - 512K x 16-Bit x 2-Bank SDRAM
  • KM416S4030C - 1M x 16Bit x 4 Banks Synchronous DRAM
  • KM416S8030 - 2M x 16Bit x 4 Banks Synchronous DRAM
  • KM416S8030B - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  • KM416S8030BN - 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
  • KM4164B - 64K X 1 BIT DYNAMIC RAM WITH PAGE MODE
  • KM416C1000B - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
  • KM416C1000C - 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode

Full PDF Text Transcription

Click to expand full text
KM416S1020C CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 0.6 September 1998 Samsung Electronics reserves the right to change products or specification without notice. w w w . t a d h s a t e e . u 4 m o c -1- Rev. 0.6 (Sep. 1998) www.DataSheet4U.com KM416S1020C Revision History Revision 0.6 (September 10, 1998) CMOS SDRAM • Removed KM416S1020C-H/L product (-H: 100MHz @ CL=2, -L: 100MHz @ CL3 ) • Changed the clock cycle time of KM416S1020C-8 @ CL2 from 12ns to 10ns, accordingly, the AC and DC parameters of KM416S1020C-8 @ CL2 are changed in AC/DC CHARACTERISTICS. For this part, the VDD condition of AC Operating Test is 3.135V ~ 3.6V • Changed ICC1 of KM416S1020C-7 @ CL2 from 115mA to 120mA in DC CHARACTERISTICS.
Published: |