KM416S1020C - 1M x 16 SDRAM

Product Overview

Samsung Semiconductor

Datasheet Details

Part number	KM416S1020C
Manufacturer	Samsung Semiconductor
File Size	764.54 KB
Description	1M x 16 SDRAM
Datasheet	KM416S1020C Datasheet
Additional preview pages of the KM416S1020C datasheet.

Product details

Description

The KM416S1020C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst Read Single-bit Write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle) CMOS SDRAM.

📁 Similar Datasheet

KM416S1020BT-G10T - CMOS 16M-Bit SDRAM (ETC)
KM416S1120AT - 521K x 16-Bit x 2 Bank SDRAM (Samsung Electronics)
KM416S1120D - 512K x 16bit x 2 Banks Synchronous DRAM LVTTL (ETC)
KM416S4020A - CMOS SDRAM (Samsung Electronics)
KM416S4020B - CMOS SDRAM (Samsung Electronics)
KM416S4021AT - CMOS SDRAM (Samsung Electronics)
KM416S4021B - CMOS SDRAM (Samsung Electronics)
KM416S4030C - 1M x 16Bit x 4 Banks Synchronous DRAM (Samsung semiconductor)

Other Datasheets by Samsung Semiconductor

KM416S1021C - 512K x 16-Bit x 2-Bank SDRAM
KM41C16000C - 16M x 1Bit CMOS Dynamic RAM
KM41V16000C - 16M x 1Bit CMOS Dynamic RAM
KM432D2131 - 512K X 32Bit X 4 Banks Double Data Rate Synchronous Graphic RAM

Published: Dec 5, 2005 |