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KM644002C - 1M X 4 Bit (with Oe)high Speed CMOS Static RAM

Datasheet Summary

Description

The KM644002C is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits.

The KM644002C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle.

Features

  • Fast Access Time 10,12,15,20ns(Max. ).
  • Low Power Dissipation Standby (TTL) : 60mA(Max. ) (CMOS) : 10mA(Max. ) Operating KM644002C - 10 : 160mA(Max. ) KM644002C - 12 : 150mA(Max. ) KM644002C - 15 : 140mA(Max. ) KM644002C - 20 : 130mA(Max. ).
  • Single 5.0V ±10% Power Supply.
  • TTL Compatible Inputs and Outputs.
  • I/O Compatible with 3.3V Device.
  • Fully Static Operation - No Clock or Refresh required.
  • Three State Outputs.
  • Center Power/Groun.

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Datasheet preview – KM644002C

Datasheet Details

Part number KM644002C
Manufacturer Samsung Semiconductor
File Size 158.48 KB
Description 1M X 4 Bit (with Oe)high Speed CMOS Static RAM
Datasheet download datasheet KM644002C Datasheet
Additional preview pages of the KM644002C datasheet.

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Full PDF Text Transcription

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( DataSheet : www.DataSheet4U.com ) KM644002C, KM644002CE, KM644002CI Document Title 1Mx4 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges. PR CMOS SRAM Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. 1.1 Removed Low power Version. 1.2 Removed Data Retention Characteristics 1.3 Changed ISB1 to 20mA 2.1 Relax D.C parameters. Item ICC 12ns 15ns 20ns Previous 160mA 155mA 150mA Current 190mA 185mA 180mA Draft Data Feb. 12. 1999 Mar. 29. 1999 Remark Preliminary Preliminary Rev. 2.0 Aug. 19. 1999 Preliminary 2.2 Relax Absolute Maximum Rating. Item Voltage on Any Pin Relative to Vss Rev. 3.0 3.1 Delete Preliminary 3.2 Update D.C parameters and 10ns part.
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