Datasheet4U Logo Datasheet4U.com

KM68FR1000 - CMOS SRAM

Datasheet Summary

Description

The KM68FV1000, KM68FS1000 and KM68FR1000 families are fabricated by SAMSUNG′s advanced Full CMOS process technology.

The families support various operating temperature range and have various package types for user flexibility of system design.

Features

  • Process Technology : Full CMOS.
  • Organization : 128K x8 bit.
  • Power Supply Voltage KM68FV1000 Family : 3.0V ~ 3.6V KM68FS1000 Family : 2.3V ~ 3.3V KM68FR1000 Family : 1.8V ~ 2.7V.
  • Low Data Retention Voltage : 1.5V(Min).
  • Three state output and TTL Compatible.
  • Package Type : 32-SOP-525, 32-TSOP1-0820F, 32-TSOP1-0813.4F, 48-CSP.

📥 Download Datasheet

Datasheet preview – KM68FR1000

Datasheet Details

Part number KM68FR1000
Manufacturer Samsung Semiconductor
File Size 200.97 KB
Description CMOS SRAM
Datasheet download datasheet KM68FR1000 Datasheet
Additional preview pages of the KM68FR1000 datasheet.

📁 Similar Datasheet

  • KM681000B - 128K x 8-bit Low Power CMOS Static RAM (Samsung)
  • KM6816 - 2K x 8-Bit CMOS STATIC RAM (Samsung)
  • KM684000 - 524288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM (Samsung)
  • KM684000B - 512Kx8 bit Low Power CMOS Static RAM (Samsung)
  • KM684000C - 512Kx8 bit Low Power CMOS Static RAM (Samsung)
  • KM684000L - 512Kx8 BIT HIGH HIGH SPEED CMOS STATIC RAM (Samsung)
  • KM684002 - 512Kx8 Bit High Speed Static RAM(5V Operating) / Revolutionary Pin out (Samsung)
  • KM684002A - 512Kx8 Bit High Speed Static RAM (Samsung)
  • KM684002AE - 512Kx8 Bit High Speed Static RAM (Samsung)
  • KM684002AI - 512Kx8 Bit High Speed Static RAM (Samsung)
Other Datasheets by Samsung Semiconductor

Full PDF Text Transcription

Click to expand full text
KM68FV1000, KM68FS1000, KM68FR1000 Family Document Title 128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial draft Revise - Erase 100ns from KM68FS1000 Family - Add 150ns for KM68FS1000 Family - Add 32-sTSOP1 new package - Add high power version ISB1=5.0µA(Max) - Change VDR(Min) 1.0 to 1.5V Finalize - Concept change high power version to low low power version ISB1=5.0µA(Max) - Change super low power version with special handling ISB1=1.0µA(Max) - Icc & Icc1(Read) decrease 10 to 5mA Revise - Change datasheet format - Remove reverse type package from product - Remove reserved speed bin(100ns) Revise - Add CSP type packaged product.
Published: |