KM68V257E Overview
The KM68V257E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The KM68V257E uses 8 mon input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advanced CMOS process and designed for high-speed circuit technology.
KM68V257E Key Features
- Fast Access Time 12,15,20ns(Max.)
- Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 2.0mA(Max.) 0.5mA(Max.) L-ver. only Operating KM68V257E
- 12 : 70mA(Max.) KM68V257E
- 15 : 70mA(Max.) KM68V257E
- 20 : 70mA(Max.)
- Single 3.3 ±0.3V Power Supply
- TTL patible Inputs and Outputs
- Fully Static Operation
- No Clock or Refresh required
- Three State Outputs