Download the KM732V688L datasheet PDF.
This datasheet also covers the KM732V688 variant, as both devices belong to the same 64kx32-bit synchronous pipelined burst sram family and are provided as variant models within a single manufacturer datasheet.
General Description
The KM732V688/L is a 2,097,152 bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
Key Features
Synchronous Operation. 2 Stage Pipelined operation with 4 Burst. On-Chip Address Counter. Self-Timed Write Cycle. On-Chip Address and Control Registers. VDD=3.3V-5%/+10% Power Supply I/O Supply Voltage : 3.3V-5%/+10% 5V Tolerant Inputs except I/O Pins. Byte Writable Function. Global Write Enable Controls a full bus-wid.
Note: The manufacturer provides a single datasheet file (KM732V688_SamsungSemiconductor.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for KM732V688L (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
KM732V688L. For precise diagrams, and layout, please refer to the original PDF.
PRELIMINARY KM732V688/L Document Title 64Kx32-Bit Synchronous Pipelined Burst SRAM, 3.3V Power Datasheets for 100QFP/TQFP 64Kx32 Synchronous SRAM Revision History Rev. No...
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heets for 100QFP/TQFP 64Kx32 Synchronous SRAM Revision History Rev. No. Rev. 0.0 Rev. 1.0 Rev. 2.0 History Initial draft Final spec release Change tOE value form 6.0 to 5.0 at tCYC 13ns. Change tCD value from 8.0 to 7.0 , tOE value form 7.0 to 5.0 at tCYC 15ns. Draft Date Jan. 19.1996 May. 25. 1997 Jun. 25. 1998 Remark Preliminary Final Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device.
KM732V688L Datasheet
