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KM736V747 Datasheet

Manufacturer: Samsung Semiconductor
KM736V747 datasheet preview

Datasheet Details

Part number KM736V747
Datasheet KM736V747_SamsungSemiconductor.pdf
File Size 286.28 KB
Manufacturer Samsung Semiconductor
Description 128Kx36 & 256Kx18 Flow-Through NtRAM
KM736V747 page 2 KM736V747 page 3

KM736V747 Overview

The KM736V747 and KM718V847 are 4,718,592-bit Synchronous Static SRAMs. The NtRAMTM, or No Turnaround Random Access Memory utilizes all bandwidth in any bination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock.

KM736V747 Key Features

  • 3.3V+0.165V/-0.165V Power Supply
  • Byte Writable Function
  • Enable clock and suspend operation
  • Single READ/WRITE control pin
  • Self-Timed Write Cycle
  • Three Chip Enable for simple depth expansion with no data contention
  • A interleaved burst or a linear burst mode
  • Asynchronous output enable control
  • Power Down mode
  • TTL-Level Three-State Outputs
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Part Number Description
KM736V749 128Kx36 & 256Kx18 Pipelined NtRAM
KM736V787 128Kx36 Synchronous SRAM
KM736V789 128Kx36 Synchronous SRAM
KM736V790 128Kx36 Synchronous SRAM
KM736V795 128Kx36 Synchronous SRAM
KM736V799 128Kx36 Synchronous SRAM
KM736V687 64Kx36-Bit Synchronous Burst SRAM
KM736V687A 64Kx36-Bit Synchronous Burst SRAM
KM736V689 64Kx36-Bit Synchronous Pipelined Burst SRAM
KM736V689A 64Kx36-Bit Synchronous Pipelined Burst SRAM

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