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KMM5321200C2W Datasheet 1m X 32 Dram Simm

Manufacturer: Samsung Semiconductor

Overview: DRAM MODULE KMM5321200C2W/C2WG 1Mx32 DRAM SIMM (1MX16 Base) Revision 0.0 November 1997 -1- Rev. 0.0 (Nov. 1997) DRAM MODULE Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. KMM5321200C2W/C2WG • Changed Module Part No. from KMM5321200CW/CWG to KMM5321200C2W/C2WG caused by PCB revision . -2- Rev. 0.0 (Nov.

General Description

The Samsung KMM5321200C2W is a 1Mx32bits Dynamic RAM high density memory module.

The Samsung KMM5321200C2W consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ packages mounted on a 72-pin glass-epoxy substrate.

A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.

Key Features

  • Part Identification - KMM5321200C2W(1024 cycles/16ms Ref, SOJ, Solder) - KMM5321200C2WG(1024 cycles/16ms Ref, SOJ, Gold).
  • Fast Page Mode Operation.
  • CAS-before-RAS refresh capability.
  • RAS-only refresh capability.
  • TTL compatible inputs and outputs.
  • Single +5V ±10% power supply.
  • JEDEC standard PDPin & pinout.
  • PCB : Height(750mil), single sided component.

More Datasheets from Samsung Semiconductor

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KMM53216004CK 16MBx32 DRAM Simm Using 16MBx4
KMM5322104CKU 2MB X 32 DRAM Simm Using 2MB X 8
KMM5322200C2W 2MBx32 DRAM Simm Using 1MBx16
KMM5322204C2W 2MBx32 DRAM Simm Using 1MBx16
KMM53232000BK 32MB X 32 DRAM Simm Using 16MBx4
KMM53232000CK 32MBx32 DRAM Simm Using 16MBx4

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