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KMM5361203C2W - 1MBx36 DRAM Simm Using 1MBx16 And 1MBx4 Quad Cas

General Description

The Samsung KMM5361203C2W is a 1Mx36bits Dynamic RAM high density memory module.

The Samsung KMM5361203C2W consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ package mounted and one CMOS 1Mx4bit Quad CAS DRAM in 24-pin SOJ package on a 72-pin glassepoxy substrate.

Key Features

  • Part Identification - KMM5361203C2W(1024 cycles/16ms Ref, SOJ, Solder) - KMM5361203C2WG(1024 cycles/16ms Ref, SOJ, Gold).
  • Fast Page Mode Operation.
  • CAS-before-RAS refresh capability.
  • RAS-only refresh capability.
  • TTL compatible inputs and outputs.
  • Single +5V ±10% power supply.
  • JEDEC standard PDPin & pinout.
  • PCB : Height(750mil), single sided component.

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Other Datasheets by Samsung Semiconductor

Part Number Description
KMM5361205C2W 1MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DRAM MODULE KMM5361203C2W/C2WG 1Mx36 DRAM SIMM (1MX16 Base) Revision 0.0 November 1997 -1- Rev. 0.0 (Nov. 1997) DRAM MODULE Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. KMM5361203C2W/C2WG • Changed Module Part No. from KMM5361203CW/CWG to KMM5361203C2W/C2WG caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5361203C2W/C2WG KMM5361203C2W/C2WG with Fast Page Mode 1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh GENERAL DESCRIPTION The Samsung KMM5361203C2W is a 1Mx36bits Dynamic RAM high density memory module. The Samsung KMM5361203C2W consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ package mounted and one CMOS 1Mx4bit Quad CAS DRAM in 24-pin SOJ package on a 72-pin glassepoxy substrate. A 0.1 or 0.