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M366S0823ETS - SDRAM DIMM

General Description

The Samsung M366S0823ETS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module.

The Samsung M366S0823ETS consists of eight CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate.

Key Features

  • f = 1/1 1.4 See Fig. 2 Vtt = 1.4V AC.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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M366S0823ETS M366S0823ETS SDRAM DIMM PC133/PC100 Unbuffered DIMM 8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung M366S0823ETS is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S0823ETS consists of eight CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. One 0.1uF and one 0.33 uF decoupling capacitors are mounted on the printed circuit board in parallel for each www.DataSheet4U.com SDRAM. The M366S0823ETS is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock.