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M53230224CE2 - (M53230224CE2/CJ2) DRAM Module

General Description

The Samsung M53230224D is a 2Mx32bits Dynamic RAM high density memory module.

The Samsung M53230224D consists of four CMOS 1Mx16bits DRAMs in 42-pin SOJ package mounted on a 72-pin glass-epoxy substrate.

A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.

Key Features

  • Part Identification - M53230224CE2-C(1024 cycles/16ms Ref, SOJ, Solder) - M53230224CJ2-C(1024 cycles/16ms Ref, SOJ, Gold).
  • Extended Data Out.
  • CAS-before-RAS refresh capability.
  • RAS-only and Hidden refresh capability.
  • TTL compatible inputs and outputs.
  • Single +5V±10% power supply.
  • JEDEC standard PDPin & pinout.

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www.DataSheet4U.com DRAM MODULE M53230224CE2/CJ2 Extended Data Out 2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V GENERAL DESCRIPTION The Samsung M53230224D is a 2Mx32bits Dynamic RAM high density memory module. The Samsung M53230224D consists of four CMOS 1Mx16bits DRAMs in 42-pin SOJ package mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The M53230224D is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.