Samsung Semiconductor M53230800CB0
The M5323080(1)0C is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.| Part No. | M53230800CB0 |
|---|---|
| Datasheet | M53230800CB0 Download |
| Manufacturer |  Samsung Semiconductor |
| Description | DRAM Module |
| Buy | Stock & Price |
GENERAL DESCRIPTION
The Samsung M5323080(1)0C is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0C consists of sixteen CMOS 4Mx4bits DRAMs in 24-pin SOJ package mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. M53230800CW0/CB0 M53230810CW0/CB0FEATURES
● Part Identification - M53230800CW0-C(4096 cycles/64ms Ref, SOJ, Solder) - M53230800CB0-C(4096 cycles/64ms Ref, SOJ, Gold) - M53230810CW0-C(2048 cycles/32ms Ref, SOJ, Solder) - M53230810CB0-C(2048 cycles/32ms Ref, SOJ, Gold)● Extended Data Out
● CAS-before-RAS refresh capability
● RAS-only and Hidden refresh capability
● TTL compatible inputs and outputs
● Single +5V±10% power supply PERFORMANCE RANGE Speed -50 -60 tRAC 50ns 60ns tCAC 13ns 15ns tRC 90ns 110ns tHPC 25ns 30ns
● 1st Gen. JEDEC standard PDPin & pinout
● PCB : Height(1000mil), double sided component PIN CONFIGURATIONS Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 1...
