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S3FS9QB Datasheet CMOS Microcontroller

Manufacturer: Samsung Semiconductor

Overview: S3CI9E0X01 www.DataSheet4U.com FLASH INTERFACE DEVICE S3CI9E0X01 SPECIFICATION Version : Ver. 1.0 Date : Jul. 16. 2003 Samsung Electronics Co., LTD Semiconductor Flash Memory Product Planning & Applications SAMSUNG ELECTRONICS 1 S3CI9E0X01 www.DataSheet4U.com FLASH INTERFACE DEVICE Revision History Revision No. 0.0 Initial Draft History Draft Date Jan. 24 2002 0.1 1.On page 18, BSC is moved from bufferRAM Write Protection command register to system configuration register and bufferRAM Write Protection command register is removed. 2. Host Interface & NAND Flash Interface (page 3) : 1.8V 0.2 --> 1.8V / 2.5V / 3.0V Mar. 13 2002 th th Remark Preliminary Jan. 25 2002 th Preliminary 1. Package information is added. 2.

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General Description

is updated.

3.

Controller ID register default value is modified.

Key Features

  • ! Architecture.
  • Design Technology : 0.25µm.
  • Voltage Supply - Main.
  • Organization - Host Interface : 16-bit 8-bit - NAND Flash Interface : - Little endian addressing.
  • Internal BufferRAM(4K Bytes) - BootRAM at booting, Cache-like at normal operation.
  • Integrated ring oscillator providing clock for NAND Flash operations.
  • Voltage detector generating internal reset signal from Vcc : 1.8V(1.65V~1.95V) / 2.5V(2.3V~2.7V) - Host Interface & NAND Flash I.

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