Samsung semiconductor IRF122
N-Channel Power MOSFET
IRF122 Specifications
- Package : TO-3
- Mount Type : Through Hole
- Drain-Source Resistance : 360mΩ
- Drain-Source Voltage : 100V
- Terminals : 2
- Max Power Dissipation : 40W
- Power Dissipation : 60W
- Max Operating Temp : 150°C
Source:
Octopart
| Part No. | IRF122 |
|---|---|
| Datasheet | IRF122 Download |
| Manufacturer |  Samsung semiconductor |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
