Samsung semiconductor IRF123
N-Channel Power MOSFET
IRF123 Specifications
- Drain-Source Resistance : 360mΩ
- Drain-Source Voltage : 80V
- Terminals : 2
- Max Power Dissipation : 40W
- Max Operating Temp : 150°C
Source:
Octopart
| Part No. | IRF123 |
|---|---|
| Datasheet | IRF123 Download |
| Manufacturer |  Samsung semiconductor |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
