Samsung semiconductor IRF130
N-Channel Power MOSFET
IRF130 Specifications
- Package : TO-3
- Mount Type : Through Hole
- Breakdown Voltage : 100V
- Drain-Source Resistance : 210mΩ
- Terminals : 2
- Channels : 1
- Max Power Dissipation : 75W
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | IRF130 |
|---|---|
| Datasheet | IRF130 Download |
| Manufacturer |  Samsung semiconductor |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
