Samsung semiconductor IRF153
N-Channel Power MOSFET
IRF153 Specifications
- Drain-Source Resistance : 80mΩ
- Min Breakdown Voltage : 60V
- Terminals : 2
- Max Power Dissipation : 150W
- Max Operating Temp : 150°C
Source:
Octopart
| Part No. | IRF153 |
|---|---|
| Datasheet | IRF153 Download |
| Manufacturer |  Samsung semiconductor |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
