Overview: K1B6416B6C
Document Title
4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory www.DataSheet4U.com UtRAM Revision History
Revision No. History
0.0 Initial Draft - Design target Revised - Deleted Deep Power Down Mode support Revised - Changed product code from K1B6416B7C into K1B6416B6C Draft Date
March 11, 2004 Remark
Advance 0.1 April 19, 2004 Advance 0.2 May 10, 2004 Advance 0.3 Revised September 1, 2004 Preliminary - Filled out Package type(54ball FBGA 6.0mm x 8.0mm) - Changed Hi-Z parameters(tCHZ, tOHZ, tBHZ, tWZ) from Max.7ns into Max.12ns and changed tHZ from Max.10ns into Max.12ns - Updated "Fig.17 TIMING WAVEFORM OF WRITE CYCLE(1)" in page 23 - Added comment on standby current(ISB1) measure condition as "Standby mode is supposed to be set up after at least one active operation after power up. ISB1 is measured after 60ms from the time when standby mode is set up." - Added comment on restriction of the transition between Asynchronous Write operation and Fully Synchronous bus operation(Page 10,11) - Filled out ISB1 value, ISBP value and ICC2 value in Table 17(DC AND OPERATING CHARACTERISTICS) - Added Synchronous Operating Current(ICC3, Max.40mA) - Added tCSHP(A)(CS high pulse width) parameter as Min.10ns in the ASYNCHRONOUS AC CHARACTERISTICS Revised October 12, 2004 - Changed ISB1(< 40°C) and ISBP(3/4 block, < 40°C) from 100µA into 120µA - Changed ISBP(1/2 block and 1/4 block, < 40°C) from 95µA into 115µA Finalized January 20, 2005 Preliminary 0.4 1.0 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. -1- Revision 1.
