K1S3216BCD Datasheet | Samsung Semiconductor

.. Document Title 2Mx16 bit Page Mode Uni-Transistor Random Access Memory Ut RAM Revision History Revision No. History 0.0 1.0 Initial Draft Finalize Draft Date Remark November 02, 2004 Preliminary Apri 06, 2005 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. -1- Revision 1.0 April 2005 .. 2M x 16 bit Page Mode Uni-Transistor CMOS RAM Features - - - - - Ut RAM GENERAL DESCRIPTION The K1S3216BCD is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current. Process Technology: CMOS Organization: 2M x16 bit Power Supply Voltage: 1.7~2.0V Three State Outputs patible with Low Power SRAM - Support 4 page read mode - Package Type: 48-FBGA-6.00x8.00 PRODUCT FAMILY Product Family Operating Temp. Vcc Range Speed (t RC) 70/85ns Power Dissipation Standby (ISB1, Max.) 100µA Operating (ICC2, Max.) 35m A PKG Type K1S3216BCD-I Industrial(-40~85°C) 1.7~2.0V 48-FBGA-6.00x8.00...