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K1S3216BCD - 2Mx16 bit Page Mode Uni-Transistor Random Access Memory

General Description

The K1S3216BCD is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell.

The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design.

Key Features

  • UtRAM.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com K1S3216BCD Document Title 2Mx16 bit Page Mode Uni-Transistor Random Access Memory UtRAM Revision History Revision No. History 0.0 1.0 Initial Draft Finalize Draft Date Remark November 02, 2004 Preliminary Apri 06, 2005 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. -1- Revision 1.0 April 2005 www.DataSheet4U.com K1S3216BCD 2M x 16 bit Page Mode Uni-Transistor CMOS RAM FEATURES • • • • • UtRAM GENERAL DESCRIPTION The K1S3216BCD is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell.