K1S3216BCD datasheet by Samsung Semiconductor.
| Part number | K1S3216BCD |
|---|---|
| Datasheet | K1S3216BCD_Samsungsemiconductor.pdf |
| File Size | 195.09 KB |
| Manufacturer | Samsung Semiconductor |
| Description | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
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The K1S3216BCD is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.
View K1S3216BCC datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| SAMSUNG Electronics | K1S3216BCC | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory | SAMSUNG Electronics |
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K1S321611C | 2Mx16 bit Uni-Transistor Random Access Memory | Samsung |
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K1S321611C-FI70 | 2Mx16 bit Uni-Transistor Random Access Memory | Samsung |
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K1S321611C-I | 2Mx16 bit Uni-Transistor Random Access Memory | Samsung |
View all Samsung Semiconductor datasheets
| Part Number | Description |
|---|---|
| K1S3216B1C | 2Mx16 bit Uni-Transistor Random Access Memory |
| K1S321615M | 2Mx16 bit Uni-Transistor Random Access Memory |
| K1S32161CC | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S1616B1A | 1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616BCA | 1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S2816BCM | 8Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S64161CC | 4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S6416BCC | 4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
