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K4C89323AF Datasheet

Manufacturer: Samsung Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

K4C89323AF datasheet preview

Datasheet Details

Part number K4C89323AF
Datasheet K4C89323AF K4C89363AF Datasheet (PDF)
File Size 1.31 MB
Manufacturer Samsung Semiconductor
Description DOUBLE DATA RATE Network-DRAM
K4C89323AF page 2 K4C89323AF page 3

K4C89323AF Overview

K4C89363AF is a CMOS Double Data Rate Network-DRAM containing 301,989,888 memory cells. K4C89363AF is organized as 2,097,152-words x 4 banks x36 bits.

K4C89323AF Key Features

  • R e f r e s h C u r r e n t ( m a x )
  • Fully Synchronous Operation
  • Double Data Rate (DDR)
  • Data input/output are synchronized with both edges of DS / QS
  • Differential Clock (CLK and C L K ) inputs
  • C S, FN and all address input signals are sampled on the positive edge of CLK
  • Output data (DQs and QS) is aligned to the crossings of CLK and CLK
  • Fast clock cycle time of 3.0 ns minimum
  • Clock : 333 MHz maximum
  • Data : 666 Mbps/pin maximum
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