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K4E660412E - (K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM

General Description

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs.

Extended Data Out Mode offers high speed random access of memory cells within the same row.

Refresh cycle(4K Ref.

Key Features

  • of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 16Mx4 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.

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📁 Similar Datasheet

Part Number Description Manufacturer
K4E660412D 16M x 4bit CMOS Dynamic RAM Samsung

Other Datasheets by Samsung Semiconductor

Part Number Description
K4E660812E (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
K4E640412E (K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM
K4E640812E (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out

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www.DataSheet4U.com Industrial Temperature K4E660412E,K4E640412E CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 16Mx4 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.